Narrowband photodetection is an important measurement technique for material analysis and sensing, for example, nondispersive infrared sensing technique. Both photoactive material engineering and nanophotonic filtering schemes have been explored to realize wavelength-selective photodetection, while most devices have a responsive bandwidth larger than 2% of the operating wavelength, limiting sensing performance. Near-infrared photodetection with a bandwidth of less than 0.2% of the operating wavelength was demonstrated experimentally in Au/Si Schottky nanojunctions. A minimum linewidth of photoelectric response down to 2.6 nm was obtained at a wavelength of 1550 nm by carefully tailing the absorptive and radiative loss in the nanostructures. Multiple functions were achieved on chip with the corrugated Au film, including narrowband resonance, light harvesting for sensing and photodetection, and electrodes for hot electron emission. Benefiting from such a unity integration with in situ photoelectric conversion of the optical sensing signal and the ultranarrowband resonance, self-contained on-chip biosensing via simple intensity interrogation was demonstrated with a limit of detection down to 0.0047% in concentration for glucose solution and 150 ng / mL for rabbit IgG. Promising potential of this technique is expected for the applications in on-site sensing, spectroscopy, spectral imaging, etc.

Epsilon-near-zero (ENZ) modes have attracted extensive interests due to its ultrasmall mode volume resulting in extremely strong light-matter interaction (LMI) for active optoelectronic devices. The ENZ modes can be electrically toggled between on and off states with a classic metal-insulator-semiconductor (MIS) configuration and therefore allow access to electro-absorption (E-A) modulation. Relying on the quantum confinement of charge-carriers in the doped semiconductor, the fundamental limitation of achieving high modulation efficiency with MIS junction is that only a nanometer-thin ENZ confinement layer can contribute to the strength of E-A. Further, for the ENZ based spatial light modulation, the requirement of resonant coupling inevitably leads to small absolute modulation depth and limited spectral bandwidth as restricted by the properties of the plasmonic or high-Q resonance systems. In this paper, we proposed and demonstrated a dual-ENZ mode scheme for spatial light modulation with a TCOs/dielectric/silicon nanotrench configuration for the first time. Such a SIS junction can build up two distinct ENZ layers arising from the induced charge-carriers of opposite polarities adjacent to both faces of the dielectric layer. The non-resonant and low-loss deep nanotrench framework allows the free space light to be modulated efficiently via interaction of dual ENZ modes in an elongated manner. Our theoretical and experimental studies reveal that the dual ENZ mode scheme in the SIS configuration leverages the large modulation depth, extended spectral bandwidth together with high speed switching, thus holding great promise for achieving electrically addressed spatial light modulation in near- to mid-infrared regions. Epsilon-near-zero (ENZ) modes have attracted extensive interests due to its ultrasmall mode volume resulting in extremely strong light-matter interaction (LMI) for active optoelectronic devices. The ENZ modes can be electrically toggled between on and off states with a classic metal-insulator-semiconductor (MIS) configuration and therefore allow access to electro-absorption (E-A) modulation. Relying on the quantum confinement of charge-carriers in the doped semiconductor, the fundamental limitation of achieving high modulation efficiency with MIS junction is that only a nanometer-thin ENZ confinement layer can contribute to the strength of E-A. Further, for the ENZ based spatial light modulation, the requirement of resonant coupling inevitably leads to small absolute modulation depth and limited spectral bandwidth as restricted by the properties of the plasmonic or high-Q resonance systems. In this paper, we proposed and demonstrated a dual-ENZ mode scheme for spatial light modulation with a TCOs/dielectric/silicon nanotrench configuration for the first time. Such a SIS junction can build up two distinct ENZ layers arising from the induced charge-carriers of opposite polarities adjacent to both faces of the dielectric layer. The non-resonant and low-loss deep nanotrench framework allows the free space light to be modulated efficiently via interaction of dual ENZ modes in an elongated manner. Our theoretical and experimental studies reveal that the dual ENZ mode scheme in the SIS configuration leverages the large modulation depth, extended spectral bandwidth together with high speed switching, thus holding great promise for achieving electrically addressed spatial light modulation in near- to mid-infrared regions.

光学传感检测技术因具有精度高、低延时和可成像等优势而得到广泛应用。随着大数据和物联网等信息技术的迅速发展，对检测平台小型化和便携性的需求日益迫切。为了克服现有技术对大型专用设备的依赖，提高对现场快检、轻载荷平台等应用场景的适用性，近年来，基于微纳光学的片上集成光学传感检测技术受到了极大关注。通过集成光源、光学传感单元与光电探测单元、以及发展片上光色散等技术，可以有效地实现光学传感信号提取和光电信号转换的片上集成，从而实现系统的微型化和多功能集成。文中介绍了相关技术原理和技术发展现状，分析了现有技术的优缺点，讨论并总结了未来的发展方向和应用前景。

Gas identification and concentration measurements are important for both understanding and monitoring a variety of phenomena from industrial processes to environmental change. Here a novel mid-IR plasmonic gas sensor with on-chip direct readout is proposed based on unity integration of narrowband spectral response, localized field enhancement and thermal detection. A systematic investigation consisting of both optical and thermal simulations for gas sensing is presented for the first time in three sensing modes including refractive index sensing, absorption sensing and spectroscopy, respectively. It is found that a detection limit less than 100 ppm for CO₂ could be realized by a combination of surface plasmon resonance enhancement and metal-organic framework gas enrichment with an enhancement factor over 8000 in an ultracompact optical interaction length of only several microns. Moreover, on-chip spectroscopy is demonstrated with the compressive sensing algorithm via a narrowband plasmonic sensor array. An array of 80 such sensors with an average resonance linewidth of 10 nm reconstructs the CO₂ molecular absorption spectrum with the estimated resolution of approximately 0.01 nm far beyond the state-of-the-art spectrometer. The novel device design and analytical method are expected to provide a promising technique for extensive applications of distributed or portable mid-IR gas sensor.